Impact of Space Weather on Flash Memory Devices

Scott Teare (New Mexico Tech), Stephen Bracht (New Mexico Tech), Darla LeBlanc, (New Mexico Tech), John L. Meason (New Mexico Tech), Lindsay Quarrie (New Mexico Tech), Sergio R. Restaino (Naval Research Laboratory), Jonathan Andrews (Naval Research Laboratory), Christopher Wilcox (Naval Research Laboratory)

Keywords: Space Weather

Abstract:

The space environment is hard on satellites, space craft and space stations, and particularly harsh on their supporting microelectronic components. The environmental effects are exacerbated as space systems require an emphasis on the use of light weight materials and components that provide little shielding against radiation. In the case of geosynchronous satellite orbits, the normal background radiation environment is composed of cosmic rays, protons and electrons. In these orbits, the most damaging radiation are cosmic rays and protons at energies greater that 30MeV, as these can easily penetrate the thin skin of space craft, and high energy electrons. Debris radiation generated from particle interactions with the space craft itself also creates problems for electronic devices.
Qualifying microelectronics devices for use in space requires a detailed understanding of the space environment, both normal and abnormal patterns generated by solar phenomenon including coronal mass discharge and solar flares. The radiation environment is measured by various satellites presently in orbit providing a measure of the space weather on a moment by moment basis. While the environment for space weather can be artificially created and devices exposed at various rates and total doses, evaluating these devices can require a significant set of electronic test and evaluation equipment.
The Microelectronics Testing and Technology Obsolescence Program (METTOP) at New Mexico Tech has been developed to provide the measurement facilities for modern electronic devices. Capabilities range from testing microprocessors and large memory devices to power and microwave devices. Combined with radiation facilities at the White Sands Missile Range, a complete testing and evaluation program has been developed. In this paper we report on recent tests of flash memory devices in an artificial space radiation environment that simulates the radiation levels experienced by devices in the orbits commonly used by GEOS satellites (35.8 Mm) and the International Space Station (0.400 Mm) and evaluates the performance of flash memory devices under several characteristic rates and total dose conditions. These results demonstrate the suitability of the METTOP facility for testing microelectronic devices. This facility is able to support both commercial and government testing.

Date of Conference: September 10-14, 2006

Track: Poster

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